CMP-System für 100/150‑mm‑Wafer (IAF-03) - PR1199438-2050-P

"CMP system for the chemical-mechanical polishing of dielectric layers such as silicon oxide on 100 mm and 150 mm Si and III-V semiconductor wafers with integrated cleaning and optical endpoint detection. The purpose of polishing is to achieve surface planarization and improve surface roughness in order to enable subsequent wafer fusion bonding of III-V semiconductors with Si wafers. " Option 1: Separate drainage lines for DI water and chemicals Option 2: SECS/GEM interface Option 3: Torque EPD